What is the Potential barrier for Ge Diode

Electrical Engineering XYZ MCQs

What is the Potential barrier for Ge Diode:

  1. 0.3 V
  2. 0.03 V
  3. 0.7 V
  4. 0.5 V

Correct answer: 1. 0.3 V

Explanation: The potential barrier for a germanium (Ge) diode is typically around 0.3 volts. This barrier arises due to the formation of a depletion region at the junction between the p-type and n-type semiconductors in the diode.

When a p-type semiconductor (with positively charged holes as majority carriers) is joined with an n-type semiconductor (with negatively charged electrons as majority carriers), diffusion of charge carriers occurs. Electrons from the n-type material diffuse across the junction and combine with holes in the p-type material, forming a region depleted of charge carriers known as the depletion region.

This depletion region acts as a barrier to the flow of current in the reverse bias direction. The potential across this barrier is typically around 0.3 volts for a germanium diode. This means that if you apply a reverse bias voltage less than 0.3 volts across the diode, it will not conduct appreciable current. However, if you apply a forward bias voltage (positive to the p-type, negative to the n-type), the potential barrier is overcome, allowing current to flow through the diode.

So, the correct answer to the multiple-choice question would be:

Potential barrier for Ge Diode: 0.3 V

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